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Volumn 88, Issue , 2015, Pages 1-41

High-K materials and metal gates for CMOS applications

Author keywords

CMOS; Field effect transistor; Gate oxide; HfO2; High K oxide

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL ATOMIC STRUCTURE; ELECTRODES; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; LOW-K DIELECTRIC; METALLURGY; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; POLYCRYSTALLINE MATERIALS; REFRACTORY METAL COMPOUNDS; SCAVENGING; SILICA; SILICON OXIDES; THRESHOLD VOLTAGE;

EID: 84916604634     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2014.11.001     Document Type: Review
Times cited : (590)

References (405)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.