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Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

Atomic mechanism of flat-band voltage shifts by La2 O 3 and Al2 O3 in gate stacks

(2) Lin, L a Robertson, J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ATOMIC MECHANISM; ATOMIC MODELS; FLAT-BAND VOLTAGE; FLAT-BAND VOLTAGE SHIFT; GATE STACKS; ION DENSITY; METAL GATE STACK; OXIDE CAPPING LAYERS; VACANCY MODELS;

ATOMS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; LANTHANUM; LOGIC GATES; NIOBIUM; OXYGEN; SILICON COMPOUNDS;

ALUMINUM;

EID: 67650486360 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3173814 Document Type: Article

Times cited : (46)

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