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Volumn 17, Issue 4, 1999, Pages 1250-1257

Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy

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[No Author keywords available]

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EID: 3843115732     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581805     Document Type: Article
Times cited : (94)

References (23)
  • 21
    • 0021469538 scopus 로고
    • The dielectric constant is frequency-dependent. The quasistatic "DC" value of ∼4 is not applicable in our case, since the time scale of electron emission is on the order of femtoseconds (taking electron kinetic energy and escape depth from our experiments). In this high-frequency range, the dielectric constant takes the "AC" value of ∼2. See H. Arwin and D. E. Aspnes, J. Vac. Sci. Technol. A 2, 1316 (1984).
    • (1984) J. Vac. Sci. Technol. A , vol.2 , pp. 1316
    • Arwin, H.1    Aspnes, D.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.