Nanoscale germanium MOS dielectrics - Part II: High-κ gate dielectrics

IEEE Transactions on Electron Devices

Volumn 53, Issue 7, 2006, Pages 1509-1516

  Chui, Chi On ^a,b   Kim, Hyoungsub ^a,c   Chi, David ^a   Mcintyre, Paul C ^a,b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

^c Sungkyunkwan University   (South Korea)

Author keywords

Germanium; Hafnium oxide; High permittivity dielectric; MOS devices; Surface passivation; Zirconium oxide

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYSTERESIS; PERMITTIVITY; SEMICONDUCTING GERMANIUM; THERMODYNAMIC STABILITY; ZIRCONIA;

ATOMIC LAYER DEPOSITION (ALD); HAFNIUM OXIDE; HIGH-PERMITTIVITY DIELECTRIC; SURFACE PASSIVATION; ULTRAVIOLET OZONE OXIDATION (UVO);

MOS DEVICES;

EID: 33745686693     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.875812     Document Type: Review

References (28)

1. C. O. Chui, F. Ito, and K. C. Saraswat, "Scalability and electrical properties of germanium oxynitride MOS dielectrics,' IEEE Electron Device Lett., vol. 25, no. 9, pp. 613-615, Sep. 2004.
2. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2004 Update. [Online]. Available: http://public. itrs.net/
3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol. 89, no. 10, pp. 5243-5275, May 2001.
4. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, "Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric," IEEE Electron Device Lett., vol. 23, no. 8, PP. 473-475, Aug. 2002.
5. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, "A sub-400 °C germanium MOSFET technology with high-κ dielectric and metal gate,' in IEDM Tech. Dig., 2002, pp. 437-440.
6. 2 gate dielectrics and TaN gate electrode," in VLSI Symp. Tech. Dig, 2003, pp. 121-122.
7. 2 on Ge and on Si," Appl. Phys. Lett., vol. 85, no. 1, pp. 52-54, Jul. 2004.
8. 2 films on Ge substrate,' Appl. Phys. Lett., vol. 84, no. 19, pp. 3741-3743, May 2004.
9. 2 gate dielectrics on surface-nitrided Ge," IEEE Trans. Electron Devices, vol. 51, no. 9, pp. 1441-1447, Sep. 2004.
10. 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition,' Appl. Phys. Lett., vol. 86, no. 3, p. 032908, Jan. 2005.
11. x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric," Appl. Phys. Lett., vol. 86, no. 3,p. 113501, 2005.
12. 2 on Ge substrate in terms of the realization of ultrathin high-κ gate stacks," Jpn. J. Appl. Phys., vol. 44, no. 4B, pp. 2323-2329, Apr. 2005.
13. E. M. Levin, H. F. McMurdie, H. P. Hallm, M. K. Reser, and H. Insley, Phase Diagrams for Ceramists. Columbus, OH: American Ceramic Society, 1956.
14. H. Kim, "Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity interface structures and electrical properties," Ph.D. dissertation, Stanford Univ., Stanford, CA, 2004.
15. C. O. Chui, H. Kim, P. C. McIntyre, and K. C. Saraswat, "Atomic layer deposition of high-κ dielectric for germanium MOS applications - Substrate surface preparation," IEEE Electron Device Lett., vol. 25, no. 5, pp. 274-276, May 2004.
16. C. O. Chui, D.-I. Lee, A. A. Singh, P. A. Pianetta, and K. C. Saraswat, "Zircortia-germanium interface photoemission spectroscopy using synchrotron radiation," J. Appl. Phys., vol. 97, no. 11, p. 113518, Apr. 2005.
17. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
18. J. Tersoff, "Theory of semiconductor heterojunctions: The role of quantum dipoles," Phys. Rev. B, Condens. Matter, vol. 30, no. 8, pp. 4874-4877, Oct. 1984.
19. J. Robertson, "Band offsets of wide-band-gap oxides and implications for future electronic devices," J. Vac. Sci. Technol. B, Microelectron., vol. 18, no. 3, pp. 1785-1791, May 2000.
20. 2 on Ge (100) substrates by atomic layer epitaxy," Appl. Phys. Lett., vol. 83, no. 13, pp. 2647-2649, Sep. 2003.
21. 2 grown on nitrided Ge (100) substrates by atomic-layer deposition," Appl. Phys. Lett., vol. 85, no. 14, pp. 2902-2904, Oct. 2004.
22. K. J. Yang and C. Hu, "MOS capacitance measurements for high-leakage thin dielectrics," IEEE Trans. Electron Devices, vol. 46, no. 7, pp. 1500-1501, Jul. 1999.
23. 2 dielectrics by ultraviolet ozone oxidation," Appl. Phys. Lett, vol. 79, no. 16, pp. 2621-2623, Oct. 2001.
24. S. Ramanathan, D. A. Muller, G. D. Wilk, C. M. Park, and P. C. McIntyre, "Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics," Appl. Phys. Lett., vol. 79, no. 20, pp. 3311-3313, Nov. 2001.
25. 2 stacks on Ge," in Physics and Technology of High-κ, Gate Dielectric IV. Pennington, NJ: Electrochemical Society, 2006, p. 491.
26. D. Chi, C. O. Chui, K. C. Saraswat, B. B. Triplett, and P. C. McIntyre, "Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates," J. Appl. Phys., vol. 96, no. 1, pp. 813-819, Jul. 2004.
27. 3 gate dielectrics," in VLSI Symp. Tech. Dig., 2003, pp. 119-120.
28. 2 on germanium and the impact of surface pretreatments," Appl. Phys. Lett., vol. 85, no. 17, pp. 3824-3826, Oct. 2004.