Experimental evidence for the flatband voltage shift of high- k metal-oxide-semiconductor devices due to the dipole formation at the high- kSi O2 interface

Applied Physics Letters

Volumn 92, Issue 13, 2008, Pages

  Iwamoto, Kunihiko ^a   Kamimuta, Yuuichi ^a   Ogawa, Arito ^a   Watanabe, Yukimune ^a   Migita, Shinji ^a   Mizubayashi, Wataru ^a   Morita, Yukinori ^a   Takahashi, Masashi ^a   Ota, Hiroyuki ^a   Nabatame, Toshihide ^a   Toriumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIPOLE MOMENT; INTERFACES (MATERIALS);

DIPOLE FORMATION; FLATBAND VOLTAGE SHIFT; GATE ELECTRODE MATERIALS; METAL-OXIDE-SEMICONDUCTOR DEVICES;

SEMICONDUCTOR DEVICES;

EID: 41649101225     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2904650     Document Type: Article

References (5)

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