Chemistry and band offsets of HfO2 thin films for gate insulators

Applied Physics Letters

Volumn 83, Issue 11, 2003, Pages 2172-2174

  Oshima, M ^a   Toyoda, S ^a   Okumura, T ^a   Okabayashi, J ^a   Kumigashira, H ^a   Ono, K ^b   Niwa, M ^c   Usuda, K ^c   Hirashita, N ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

^c Semiconductor Technology Academic Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; HAFNIUM COMPOUNDS; METALLIC FILMS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND OFFSETS;

SURFACE CHEMISTRY;

EID: 0142026383     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1611272     Document Type: Article

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