The effect of donor/acceptor nature of interface traps on Ge MOSFET characteristics

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1015-1022

  Kuzum, Duygu ^a   Park, Jin Hong ^a,b   Krishnamohan, Tejas ^a,c   Wong, H S Philip ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b Kyung Hee University   (South Korea)

^c INTEL CORPORATION   (United States)

Author keywords

Acceptor; donor; GeO2; germanium; interface trap density; mobility; n type metaloxidesemiconductor field effect transistor (NMOSFET); ozone oxidation

Indexed keywords

ACCEPTOR; DONOR; GEO2; INTERFACE TRAP DENSITY; MOBILITY; N-TYPE METALOXIDESEMICONDUCTOR FIELD-EFFECT TRANSISTOR (NMOSFET); OZONE OXIDATION;

ELECTRON MOBILITY; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HOLE MOBILITY; OXIDATION; OZONE;

MOSFET DEVICES;

EID: 79953094068     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2120613     Document Type: Article

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