Composition, chemical structure, and electronic band structure of rare earth oxide/Si(1 0 0) interfacial transition layer

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 283-287

  Hattori, T ^a   Yoshida, T ^a   Shiraishi, T ^a   Takahashi, K ^a   Nohira, H ^a   Joumori, S ^b   Nakajima, K ^b   Suzuki, M ^b   Kimura, K ^b   Kashiwagi, I ^c   Ohshima, C ^c   Ohmi, S ^c   Iwai, H ^c  

^a TOKYO CITY UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Depth profiling; Electronic band structures; High k dielectrics; Photoelectron spectroscopy; Rutherford back scattering

Indexed keywords

BAND STRUCTURE; COMPOSITION; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MOSFET DEVICES; PERMITTIVITY; PHOTOELECTRON SPECTROSCOPY; RARE EARTH COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; STRUCTURE (COMPOSITION);

ELECTRONIC BAND STRUCUTRES;

DIELECTRIC FILMS;

EID: 12144287611     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.005     Document Type: Conference Paper

References (10)

1. Wilk G.D., Wallace R.M., Anthony J.M. J. Appl. Phys. 89:2001;5243-5275.
2. Prokofiev A.V., Shelykh A.I., Melekh B.T. J. Alloys Comp. 242:1996;41-44.
3. Shannon R.D. J. Appl. Phys. 73:1993;348-366.
4. T. Shiraishi, T. Nakamura, K. Takahashi, I. Kashiwagi, C. Ohshima, H. Nohira, S. Ohmi, H. Iwai, T. Hattori, Depth profiling of high- k dielectric/Si interfacial transition layer, in: Ext. Abstract of International Conference on Solid State Devices and Materials, Nagoya, 2002, pp. 758-759.
5. Kimura K., Ohshima K., Mannami M. Appl. Phys. Lett. 64:1994;2232-2234.
6. Gelius U., Wannberg B., Baltzer P., Fellner-Feldegg H., Carlsson G., Johansson C.G., Larsson J., Munger P., Vergerfos G. J. Electron Spectrosc. Relat. Phenom. 52:1990;747-785.
7. Ohishi K., Hattori T. Jpn. J. Appl. Phys. 33:1994;L675-L678.
8. Gupta J.A., Landheer D., Sproule G.I., McCaffrey J.P., Graham M.J., Yang K.-C., Lu Z.-H., Lennard W.N. Appl. Surf. Sci. 173:2001;318-326.
9. Gupta J.A., Landheer D., McCaffrey J.P., Sproule G.I. Appl. Phys. Lett. 78:2001;1718-1720.
10. Miyazaki S. J. Vac. Sci. Technol. B 19:2001;2212-2216.