Application of HfSiON as a gate dielectric material

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3183-3185

  Visokay, M R ^a   Chambers, J J ^a   Rotondaro, A L P ^a   Shanware, A ^a   Colombo, L ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE LAYER; LOW DIELECTRIC CONSTANTS; METAL OXIDE SEMICONDUCTOR; ORDERS OF MAGNITUDE; OXIDE THICKNESS;

ELECTRIC PROPERTIES; GATE DIELECTRICS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOS DEVICES; OXIDE FILMS; SILICON COMPOUNDS;

DIELECTRIC MATERIALS;

EID: 79956056584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476397     Document Type: Article

References (13)

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