Reduction in interface trap density of Al2O3/SiGe gate stack by electron cyclotron resonance plasma post-nitridation

Applied Physics Express

Volumn 6, Issue 5, 2013, Pages

  Han, Jaehoon ^a   Zhang, Rui ^a   Osada, Takenori ^b   Hata, Masahiko ^b   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE METHOD; ELECTRON CYCLOTRON RESONANCE PLASMA; EQUIVALENT OXIDE THICKNESS; INTERFACE TRAP DENSITY; INTERFACIAL LAYER; INTERFACIAL PROPERTY; NITROGEN PASSIVATIONS; POST-NITRIDATION;

ALUMINUM; DIELECTRIC DEVICES; ELECTRON CYCLOTRON RESONANCE; GERMANIUM; NITRIDATION; PHOTOELECTRONS; PLASMAS; SEMICONDUCTING SILICON; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON ALLOYS;

EID: 84880900004     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.6.051302     Document Type: Article

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