Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2047-2056

  Bersuker, Gennadi ^a   Park, Chang Seo ^a   Wen, Huang Chun ^a,b   Choi, K ^a,c   Price, Jimmy ^a   Lysaght, Patrick ^a   Tseng, Hsing Huang ^a,d   Sharia, O ^e   Demkov, Alex ^e   Ryan, Jason T ^f,g   Lenahan, P ^f  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d TEXAS STATE UNIVERSITY   (United States)

^e UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^f PENNSYLVANIA STATE UNIVERSITY   (United States)

^g NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Flatband voltage roll off; high k dielectrics; metal gate work function

Indexed keywords

BAND EDGE; FLAT BAND; FLAT-BAND VOLTAGE; HIGH-K DIELECTRIC; INTERFACIAL LAYER; K DIELECTRICS; METAL GATE WORK FUNCTION; METAL/HIGH-K GATE; POSITIVELY CHARGED; SI SUBSTRATES; SUBSTRATE TYPES; VOLTAGE REDUCTION;

DIELECTRIC MATERIALS; LOGIC GATES; OXYGEN; OXYGEN VACANCIES; SILICON COMPOUNDS; WORK FUNCTION;

GATE DIELECTRICS;

EID: 77956045274     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051863     Document Type: Article

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