Native point defects and dangling bonds in α-Al2O 3

Journal of Applied Physics

Volumn 113, Issue 4, 2013, Pages

  Choi, Minseok ^a   Janotti, Anderson ^a   Van De Walle, Chris G ^a  

^a Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A TRANSITIONS; ACCEPTOR LEVELS; BAND OFFSETS; CARRIER LEAKAGE; CHARGE TRAP; DEEP DONOR; DONOR LEVELS; FIXED CHARGES; HYBRID FUNCTIONAL; II-IV SEMICONDUCTORS; INTERSTITIALS; METAL OXIDE SEMICONDUCTOR STRUCTURES; NATIVE POINT DEFECTS; OXYGEN INTERSTITIALS; TRANSITION LEVEL;

CONDUCTION BANDS; DANGLING BONDS; DIELECTRIC DEVICES; POINT DEFECTS;

ALUMINUM;

EID: 84873681454     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4784114     Document Type: Article

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