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Volumn 113, Issue 4, 2013, Pages

Native point defects and dangling bonds in α-Al2O 3

Author keywords

[No Author keywords available]

Indexed keywords

A TRANSITIONS; ACCEPTOR LEVELS; BAND OFFSETS; CARRIER LEAKAGE; CHARGE TRAP; DEEP DONOR; DONOR LEVELS; FIXED CHARGES; HYBRID FUNCTIONAL; II-IV SEMICONDUCTORS; INTERSTITIALS; METAL OXIDE SEMICONDUCTOR STRUCTURES; NATIVE POINT DEFECTS; OXYGEN INTERSTITIALS; TRANSITION LEVEL;

EID: 84873681454     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4784114     Document Type: Article
Times cited : (229)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.