High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

Journal of Applied Physics

Volumn 90, Issue 1, 2001, Pages 512-514

  Guha, S ^a   Cartier, E ^a   Bojarczuk, N A ^a   Bruley, J ^a,b   Gignac, L ^a   Karasinski, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035395260     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1373695     Document Type: Article

References (11)

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