Interfacial characteristics of HfO 2 grown on nitrided Ge (100) substrates by atomic-layer deposition

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2902-2904

  Kim, Hyoungsub ^a   McIntyre, Paul C ^a   Chui, Chi On ^a   Saraswat, Krishna C ^a   Cho, Mann Ho ^b  

^a Stanford University   (United States)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-LAYER DEPOSITION; CARRIER TRAPPING; INTERFACE LAYERS; NITRIDATION;

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MICROSTRUCTURE; NITRIDES; SEMICONDUCTING GERMANIUM COMPOUNDS; THERMODYNAMIC STABILITY;

MOS CAPACITORS;

EID: 8344249538     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1797564     Document Type: Article

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