First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high- k dielectrics

Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

  Umezawa, N ^a   Shiraishi, K ^a,b   Ohno, T ^a   Watanabe, H ^a,c   Chikyow, T ^a   Torii, K ^d   Yamabe, K ^a,b   Yamada, K ^a,e   Kitajima, H ^d   Arikado, T ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; DIELECTRIC MATERIALS; ELECTRIC CHARGE; ELECTRIC CURRENTS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; REDUCTION;

ELECTRON LEAKAGE; GATE LEAKAGE CURRENTS; GENERALIZED GRADIENT APPROXIMATIONS (GGA); OXYGEN VACANCIES;

NITROGEN;

EID: 20244386271     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1899232     Document Type: Article

References (14)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
2. C. S. Kang, H. J. Cho, K. Onishi, R. Nieh, R. Choi, S. Gopalan, S. Krishnan, J. H. Han, and J. C. Lee, Appl. Phys. Lett. 81, 2593 (2002).
3. H. J. Cho, C. S. Kang, K. Onishi, S. Gopalan, R. Nieh, R. Choi, S. Krishnan, and J. C. Lee, IEEE Electron Device Lett. 23, 249 (2002).
4. C. H. Choi, T. S. Jeon, R. Clark, and D. L. Kwong, IEEE Electron Device Lett. 24, 215 (2003).
5. K. Torii, A. Aoyama, S. Kamiyama, Y. Tamuara, S. Miyazaki, H. Kitajima, and T. Arikado, Tech. Dig. 2004 Symp. VLSI Tech. 112 (2004).
6. H. Takeuchi, D. Ha, and T.-J. King, J. Vac. Sci. Technol. A 22, 1337 (2004).
7. R. M. Fleming, D. V. Lang, C. D. W. Jones, M. L. Steigerwald, D. W. Murphy, G. B. Alers, Y.-H. Wong, R. B. van Dover, J. R. Kwo, and A. M. Sergent, J. Appl. Phys. 88, 850 (2000).
8. C. H. Choi, S. J. Rhee, T. S. Jeon, N. Lu, J. H. Sim, R. Clark, M. Niwa, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet., 2002, 857 (2002).
9. M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, and A. Nishiyama, Tech. Dig. - Int. Electron Devices Meet. 2002, 849 (2002).
10. G. Shang, P. W. Peacock, and J. Robertson, Appl. Phys. Lett. 84, 106 (2004).
11. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
12. J. Yamauchi, M. Tsukada, S. Watanabe, and O. Sugino, Phys. Rev. B 54, 5586 (1996).
13. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
14. A. S. Foster, F. L. Gejo, A. Shluger, and R. M. Nieminen, Phys. Rev. B 65, 174117 (2002).