Composition dependence of the work function of Ta1-xAl xNymetal gates

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Alshareef, H N ^a,c   Choi, K ^a   Wen, H C ^a   Luan, H ^a,d   Harris, H ^a,d   Senzaki, Y ^a   Majhi, P ^a,e   Lee, B H ^a,f   Jammy, R ^a,f   Aguirre Tostado, S ^b   Gnade, B E ^b   Wallace, R M ^b  

^a SEMATECH   (United States)

^b The University of Texas at Dallas   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d Infineon ^*

^e INTEL CORPORATION   (United States)

^f IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL-O BONDING; GATE DIELECTRICS; METAL GATES; WORK FUNCTION;

ALUMINUM; CHEMICAL ANALYSIS; COMPOSITION; CONCENTRATION (PROCESS); ELECTRODES; NITROGEN; PERMITTIVITY;

TANTALUM COMPOUNDS;

EID: 32944474528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2174836     Document Type: Article

References (7)

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