Band offsets and Schottky barrier heights of high dielectric constant oxides

Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4712-4721

  Peacock, P W ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; CONDUCTION BAND OFFSET; ELECTRONIC DEVICE; EXPERIMENTAL VALUES; FUTURE GENERATIONS; GATE OXIDE; HIGH DIELECTRIC CONSTANTS; INTERNAL PHOTOEMISSION; LOCAL DENSITY; PSEUDOPOTENTIAL METHOD; SCHOTTKY BARRIER HEIGHTS; TIGHT BINDING METHODS;

ALUMINUM COMPOUNDS; ELECTRONIC STRUCTURE; GATE DIELECTRICS; HAFNIUM OXIDES; LANTHANUM OXIDES; PHOTOEMISSION; SILICATES;

GATES (TRANSISTOR);

EID: 18744406968     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506388     Document Type: Article

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