Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects

IEEE Electron Device Letters

Volumn 24, Issue 11, 2003, Pages 689-691

  Ragnarsson, L A ^a,b   Bojarczuk, N A ^a   Karasinski, J ^a   Guha, S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IMEC   (Belgium)

Author keywords

Charge carrier mobility; Charge carrier processes; Hafnium oxide (HfO 2); Hall effect; High permittivity; MOSFETs

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HALL EFFECT; PERMITTIVITY; POLYSILICON;

COULOMB SCATTERING;

MOSFET DEVICES;

EID: 0242578070     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.818817     Document Type: Article

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