Defects and their passivation in high K gate oxides

Microelectronic Engineering

Volumn 84, Issue 4, 2007, Pages 663-668

  Tse, K ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Calculation; Defects; Oxides; Passivation

Indexed keywords

CHARGE TRAPPING; CMOS INTEGRATED CIRCUITS; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; PASSIVATION; PERMITTIVITY;

GATE OXIDES; IONIC OXIDES; MOBILITY DEGRADATION;

OXIDES;

EID: 33847634809     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.12.009     Document Type: Article

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