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Applied Physics Letters

Volumn 98, Issue 15, 2011, Pages

Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films

(4) Zafar, Sufi a Jagannathan, Hemanth b Edge, Lisa F b Gupta, Devendra a

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM RESEARCH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SAMPLES; CONVENTIONAL TECHNIQUES; DIFFUSION COEFFICIENTS; DIFFUSION MEASUREMENTS; FIRST PRINCIPLE CALCULATIONS; NANO-METER SCALE; OXYGEN DIFFUSION; OXYGEN IONS; POSITIVELY CHARGED; ROOM TEMPERATURE; THERMALLY ACTIVATED; TRANSIENT GATE CURRENTS; VACANCY DIFFUSION;

ACTIVATION ENERGY; DIELECTRIC DEVICES; DIELECTRIC FILMS; DIFFUSION IN GASES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; OXYGEN; VACANCIES;

OXYGEN VACANCIES;

EID: 79954594438 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3579256 Document Type: Article

Times cited : (79)

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