Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors: Effective electron mobility

Applied Physics Letters

Volumn 78, Issue 26, 2001, Pages 4169-4171

  Ragnarsson, L A ^a   Guha, S ^a   Copel, M ^a   Cartier, E ^a   Bojarczuk, N A ^a   Karasinski, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035947882     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1381566     Document Type: Article

References (15)

1. International Technology Roadmap for Semiconductors (1999).
2. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
3. M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. 76, 436 (2000).
4. S. Guha, E. Cartier, N. A. Bojarczuk, J. Bruley, L. Gignac, and J. Karasinski, J. Appl. Phys. (in press).
5. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, Appl. Phys. Lett. 77, 2710 (2000).
6. M. Copel, IBM J. Res. Dev. 44, 571 (2000).
7. S. I. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 41, 2357 (1994).
8. 2.
9. S.-H. Lo and D. A. Buchanan, IEEE Electron Device Lett. ED-18, 209 (1997).
10. J. Maserjian, G. Petersson, and C. Svensson, Solid-State Electron. 17, 335 (1974).
11. T. Matsuoka, S. Taguchi, Q. D. M. Khosru, K. Taniguchi, and C. Hamaguchi, J. Appl. Phys. 78, 3252 (1995).
12. S. Villa, A. L. Lacaita, L. M. Perron, and R. Bez, IEEE Trans. Electron Devices 44, 110 (1998).
13. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).
14. H. Z. Massoud, J. Appl. Phys. 63, 2000 (1988).
15. L.-Å. Ragnarsson, S. Guha, N. A. Bojarczuk, E. Cartier, M. V. Fischetti, K. Rim, and J. Karasinski (unpublished).