Kinetic model of Si oxidation at HfO2/Si interface with post deposition annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 6131-6135

  Shimizu, Haruka ^a   Kita, Koji ^a   Kyuno, Kentaro ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Atomic oxygen; HfO2; Interface layer; Si oxidation; Surface orientation

Indexed keywords

CRYSTAL ORIENTATION; ELLIPSOMETRY; MATHEMATICAL MODELS; OXIDATION; REACTION KINETICS; SILICON;

HFO2; INTERFACE LAYER; SI OXIDATION; SURFACE ORIENTATION;

HAFNIUM COMPOUNDS;

EID: 31544477427     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6131     Document Type: Article

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