Dual high-k gate dielectric with poly gate electrode: HfSiON on nMOS and Al2O3 capping layer on pMOS

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 441-444

  Li, Hong Jyh ^a   Gardner, Mark I ^a  

^a SEMATECH   (United States)

Author keywords

Al2O3; Dielectric devices; Dielectric films; HfSiON

Indexed keywords

ALUMINA; DIELECTRIC DEVICES; DIELECTRIC FILMS; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; POLYSILICON; VOLTAGE CONTROL;

FERMI PINNING EFFECT; GATE DIELECTRIC; POLY SI GATE ELECTRODE;

MOSFET DEVICES;

EID: 22944435193     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851093     Document Type: Article

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