Boron penetration studies from p+ polycrystalline Si through HfSixOy

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1074-1076

  Quevedo Lopez, M A ^a   El Bouanani, M ^a   Kim, M J ^a   Gnade, B E ^a   Wallace, R M ^a   Visokay, M R ^b   Lifatou, A ^b   Bevan, M J ^b   Colombo, L ^b  

^a Center for Advanced Research and Technology   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; B DIFFUSION; B INCORPORATION; BORON PENETRATION; DEPTH PROFILE; DIFFUSIVITIES; POLYCRYSTALLINE-SI; SI SUBSTRATES;

BORON; DIFFUSION; GATE DIELECTRICS; GRAIN BOUNDARIES; POLYSILICON; SILICON COMPOUNDS;

HAFNIUM COMPOUNDS;

EID: 79956058734     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498872     Document Type: Article

References (24)

1. International Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 2001);http//public.itrs.net
2. J. R. Pfiester, L. C. Parrillo, and F. K. Baker, IEEE Electron Device Lett. 11, 247 (1990). edlEDLEDZ0741-3106
3. R. B. Fair, Tech. Dig.-Int. Electron Devices Meet. 1995, 212 (1995). tcdTDIMD50163-1918
4. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001). japJAPIAU0021-8979
5. D. G. Park, H. Cho, I. S. Yeo, J. A. Roh, and J. M. Hwang, Appl. Phys. Lett. 77, 2207 (2000). aplAPPLAB0003-6951
6. K. Onishi, L. Kang, R. Choi, E. Dharmarajan, S. Gopalan, Y. Jeon, C. Kang, B. Lee, R. Nieh, and J. C. Lee, VLSI Tech. Symp. Tech. Digest, 131 (2001).
7. K. Onishi, L. Kang, R. Choi, H. J. Cho, S. Gopalan, R. Nieh, E. Dharmarajan, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. 2001, 659 (2001). tcdTDIMD50163-1918
8. E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett. 76, 176 (2000). aplAPPLAB0003-6951
9. D.-G. Park, K.-Y. Lim, H.-J. Cho, J.-J. Kim, J.-M. Yang, J. Ko, I.-S. Yeo, J.-W. Park, H. de Waard, and M. Tuominem, J. Appl. Phys. 91, 65 (2002). japJAPIAU0021-8979
10. L. Kang, K. Onishi, Y. Jeon, B.-H. Lee, C. Kang, W.-J. Qi, R. Nieh, S. Gopalan, R. Choi, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. 2000, 25 (2000). tcdTDIMD50163-1918
11. R. B. Fair, J. Electrochem. Soc. 144, 708 (1997). jesJESOAN0013-4651
12. M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 79, 4192 (2001). aplAPPLAB0003-6951
13. I. Banerjee and D. Kuzminov, Appl. Phys. Lett. 62, 1541 (1993). aplAPPLAB0003-6951
14. I. Banerjee and D. Kuzminov, J. Vac. Sci. Technol. B 12, 205 (1994). jvbJVTBD90734-211X
15. F. A. Stevie, E. P. Martin, Jr., P. M. Kahora, J. T. Cargo, A. K. Nanda, A. S. Harrus, A. J. Muller, and H. W. Krautter, J. Vac. Sci. Technol. A 9, 2813 (1991). jvaJVTAD60734-2101
16. C. T. Sah, H. Sello, and D. A. Tremere, J. Phys. Chem. Solids 11, 288 (1959). jpxJPCSAW0022-3697
17. K. S. Krisch, M. L. Green, F. H. Baumann, D. Brasen, L. C. Feldman, and L. Machanda, IEEE Trans. Electron Devices 43, 982 (1996). etdIETDAI0018-9383
18. K. A. Ellis and R. A. Buhrman, J. Electrochem. Soc. 145, 2068 (1998). jesJESOAN0013-4651
19. M. J. Bevan, M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, H. Bu, A. Shanware, D. E. Mercer, R. T. Laaksonen, and L. Colombo., IEEE 2001 Semiconductor Interface Specialists Conference, Washington, D.C., Nov. 29-Dec. 1 (2001).
20. M. Navi and S. T. Dunham, Appl. Phys. Lett. 72, 2111 (1998). aplAPPLAB0003-6951
21. W. R. Runyan and K. E. Bean, Semiconductor Integrated Circuit Processing Technology (Addison-Wesley, Reading, MA, 1994).
22. S. Jeon, C.-J. Choi, T.-Y. Seong, and H. Hwang, Appl. Phys. Lett. 79, 245 (2001). aplAPPLAB0003-6951
23. R. M. Wallace, R. A. Stolz, and G. D. Wilk, US Patent Nos. 6,013,553 (2000); 6,020,243 (2000); 6,291,866 (2001); 6,291,867 (2001).
24. A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson, and L. Colombo, VLSI Technology Symp. Tech. Digest, 148 (2002).