Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Applied Physics Letters

Volumn 76, Issue 14, 2000, Pages 1926-1928

  Lee, Byoung Hun ^a   Kang, Laegu ^a   Nieh, Renee ^a   Qi, Wen Jie ^a   Lee, Jack C ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000361018     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126214     Document Type: Article

References (6)

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2. T. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
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4. M. Balog, M. Schieber, M. Michiman, and S. Patai, Thin Solid Films 41, 247 (1977).
5. B. H. Lee, L. Kang, W.-J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. C. Lee, Tech. Dig. Int. Electron Devices Meet., 133 (1999).
6. R. Cleavelin and W. Class, Proceedings International Technical Roadmap Symposium, 1999, p. 19.