Interface control of high-k gate dielectrics on Ge

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6094-6099

  Caymax, M ^a   Houssa, M ^a   Pourtois, G ^a   Bellenger, F ^a   Martens, K ^a   Delabie, A ^a   Van Elshocht, S ^a  

^a IMEC   (Belgium)

Author keywords

First principles modeling; Ge MOSFET; High k gate stack

Indexed keywords

DIELECTRIC MATERIALS; GATE DIELECTRICS; GERMANIUM OXIDES; HIGH-K DIELECTRIC; INTERFACES (MATERIALS); MOSFET DEVICES;

DIELECTRIC INTERFACE; FIRST PRINCIPLES MODELS; GE MOSFET; HIGH- K GATE DIELECTRICS; HIGH-K GATE STACKS; INTERFACE STATE DENSITY; MATERIAL CHARACTERIZATIONS; THERMALLY OXIDIZED;

INTERFACE STATES;

EID: 45049085545     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.134     Document Type: Article

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