Integrity of hafnium silicate/silicon dioxide ultrathin films on Si

Applied Physics Letters

Volumn 81, Issue 16, 2002, Pages 2995-2997

  Morais, J ^a   Miotti, L ^a   Soares, G V ^a   Teixeira, S R ^a   Pezzi, R ^a   Bastos, K P ^a   Baumvol, I J R ^a   Rotondaro, A L P ^b   Chambers, J J ^b   Visokay, M R ^b   Colombo, L ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FILM; ATOMIC TRANSPORT; GRAZING ANGLES; HAFNIUM SILICATES; ISOTOPIC SUBSTITUTION; NUCLEAR REACTION ANALYSIS; NUCLEAR REACTIONS; PSEUDO-BINARIES; X RAY REFLECTION;

CRYSTAL ATOMIC STRUCTURE; HAFNIUM; HAFNIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NUCLEAR PHYSICS; RAPID THERMAL ANNEALING; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

ULTRATHIN FILMS;

EID: 79955983568     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515112     Document Type: Article

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