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Volumn 2, Issue 11, 2003, Pages 749-754

Atomic layer deposition of transition metals

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPOSITION EFFECTS; DEPOSITION; HYDROGEN; ORGANOMETALLICS; SURFACE REACTIONS; THICKNESS CONTROL; THIN FILMS; WATER;

EID: 0242583886     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1000     Document Type: Article
Times cited : (634)

References (19)
  • 1
    • 0034739021 scopus 로고    scopus 로고
    • Alternative dielectrics to silicon dioxide for memory and logic devices
    • Kingon, A. I., Maria, J.-P. & Streiffer, S. K. Alternative dielectrics to silicon dioxide for memory and logic devices. Nature 406, 1032-1038 (2000).
    • (2000) Nature , vol.406 , pp. 1032-1038
    • Kingon, A.I.1    Maria, J.-P.2    Streiffer, S.K.3
  • 2
    • 0004266127 scopus 로고
    • Suntola, T. & Simpson, M. (eds); (Blackie, Glasgow)
    • Suntola, T. & Simpson, M. (eds) Atomic Layer Epitaxy (Blackie, Glasgow, 1990).
    • (1990) Atomic Layer Epitaxy
  • 3
    • 0037064190 scopus 로고    scopus 로고
    • Rapid vapor deposition of highly conformal silica nanolaminates
    • Hausmann, D., Becker, J., Wang, S. & Gordon, R. G. Rapid vapor deposition of highly conformal silica nanolaminates. Science 298, 402-406 (2002).
    • (2002) Science , vol.298 , pp. 402-406
    • Hausmann, D.1    Becker, J.2    Wang, S.3    Gordon, R.G.4
  • 4
    • 0141610893 scopus 로고    scopus 로고
    • A kinetic model for step coverage by alternating layer deposition (ALD) in narrow holes or trenches
    • Gordon, R. G., Hausmann, D., Kim, E. & Shepard, J. A kinetic model for step coverage by alternating layer deposition (ALD) in narrow holes or trenches. Chem. Vapor Depos. 9, 73-78 (2003).
    • (2003) Chem. Vapor Depos. , vol.9 , pp. 73-78
    • Gordon, R.G.1    Hausmann, D.2    Kim, E.3    Shepard, J.4
  • 6
    • 0034140916 scopus 로고    scopus 로고
    • Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction
    • Klaus, J. W., Ferro, S. J. & George, S. M. Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction. Thin Solid Films 360, 145-153 (2000).
    • (2000) Thin Solid Films , vol.360 , pp. 145-153
    • Klaus, J.W.1    Ferro, S.J.2    George, S.M.3
  • 11
    • 0036565106 scopus 로고    scopus 로고
    • Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
    • Kim, H. & Rossnagel, S. M. Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition. J. Vacuum Sci. Technol. A 20, 802-808 (2002).
    • (2002) J. Vacuum Sci. Technol. A , vol.20 , pp. 802-808
    • Kim, H.1    Rossnagel, S.M.2
  • 12
    • 23044522146 scopus 로고    scopus 로고
    • Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
    • Rossnagel, S. M., Sherman, A. & Turner, F. Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers. J. Vacuum Sci. Technol. B 18, 2016-2020 (2000).
    • (2000) J. Vacuum Sci. Technol. B , vol.18 , pp. 2016-2020
    • Rossnagel, S.M.1    Sherman, A.2    Turner, F.3
  • 13
    • 0035982535 scopus 로고    scopus 로고
    • Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
    • Kim, H., Cabral, C. Jr, Lavoie, C. & Rossnagel, S. M. Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition. J. Vacuum Sci. Technol. B 20, 1321-1326 (2002).
    • (2002) J. Vacuum Sci. Technol. B , vol.20 , pp. 1321-1326
    • Kim, H.1    Cabral Jr., C.2    Lavoie, C.3    Rossnagel, S.M.4
  • 14
    • 0036863092 scopus 로고    scopus 로고
    • Study on the characteristics of aluminum thin films prepared by atomic layer deposition
    • Lee, Y. J. & Kang, S.-W. Study on the characteristics of aluminum thin films prepared by atomic layer deposition. J. Vacuum Sci. Technol. A 20, 1983-1988 (2002).
    • (2002) J. Vacuum Sci. Technol. A , vol.20 , pp. 1983-1988
    • Lee, Y.J.1    Kang, S.-W.2
  • 15
    • 0000715879 scopus 로고    scopus 로고
    • Synthesis and structures of mono- and bis(amidinate) complexes of aluminum
    • Coles, M. P., Swensen, D. C., Jordan, R. F., & Young, V. G. Jr. Synthesis and structures of mono- and bis(amidinate) complexes of aluminum. Organometallics 16, 5183-5194 (1997).
    • (1997) Organometallics , vol.16 , pp. 5183-5194
    • Coles, M.P.1    Swensen, D.C.2    Jordan, R.F.3    Young Jr., V.G.4
  • 16
    • 85029146620 scopus 로고    scopus 로고
    • Synthesis and characterization of volatile, thermally stable and reactive transition metal amidinates
    • (in the press)
    • Lim, B. S., Rahtu, A., Park, J.-S. & Gordon, R. G. Synthesis and characterization of volatile, thermally stable and reactive transition metal amidinates. Inorg. Chem. (in the press).
    • Inorg. Chem.
    • Lim, B.S.1    Rahtu, A.2    Park, J.-S.3    Gordon, R.G.4
  • 17
    • 0037425280 scopus 로고    scopus 로고
    • Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia
    • Becker, J. S. & Gordon, R. G. Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia. Appl. Phys. Lett. 82, 2239-2241 (2003).
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 2239-2241
    • Becker, J.S.1    Gordon, R.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.