Compatibility of silicon gates with hafnium-based gate dielectrics

Microelectronic Engineering

Volumn 69, Issue 2-4, 2003, Pages 138-144

  Gilmer, D C ^a   Hegde, R ^a   Cotton, R ^a   Smith, J ^a   Dip, L ^a   Garcia, R ^a   Dhandapani, V ^a   Triyoso, D ^a   Roan, D ^a   Franke, A ^a   Rai, R ^a   Prabhu, L ^a   Hobbs, C ^a   Grant, J M ^a   La, L ^a   Samavedam, S ^a   Taylor, B ^a   Tseng, H ^a   Tobin, P ^a  

^a MOTOROLA INC   (United States)

Author keywords

Al2O3; Dielectric; Hafnium aluminate; Hafnium silicate; HfO2

Indexed keywords

ALUMINA; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; HAFNIUM; NUCLEATION; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SILANES; SILICON;

SILICON GATES;

DIELECTRIC MATERIALS;

EID: 0141792795     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00290-9     Document Type: Conference Paper

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