Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 740-742

  Frank, Martin M ^a,c   Chabal, Yves J ^a,c   Green, Martin L ^b,c   Delabie, Annelies ^b   Brijs, Bert ^b   Wilk, Glen D ^c,e   Ho, Mun Yee ^c,f   Da Rosa, Elisa B O ^d   Baumvol, Israel J R ^d   Stedlle, Fernanda C ^d  

^a RUTGERS UNIVERSITY   (United States)

^b IMEC   (Belgium)

^c AGERE SYSTEMS   (United States)

^d FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^e ASM AMERICA   (United States)

^f CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; INFRARED SPECTROSCOPY; NUCLEATION; PERMITTIVITY; RESONANCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

SILICON;

EID: 0043014767     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1595719     Document Type: Article

References (21)

1. A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, Thin Solid Films 292, 135 (1997).
2. G. S. Higashi and C. G. Fleming, Appl. Phys. Lett. 55, 1963 (1989).
3. E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett. 76, 176 (2000).
4. D. G. Park, H. J. Cho, K. Y. Lim, C. Lim, I. S. Yeo, J. S. Roh, and J. W. Park, J. Appl. Phys. 89, 6275 (2001).
5. H. Bender, T. Conard, H. Nohira, J. Perry, O. Richard, C. Zhao, B. Brijs, W. Besling, C. Detavernier, W. Vandervorst, M. Caymax, S. De Gendt, J. Chen, J. Kluth, W. Tsai, and J. W. Maes, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001, IEEE Cat. No. 01EX537, p. 86.
6. V. Cosnier, H. Bender, A. Caymax, J. Chen, T. Conard, H. Nohira, O. Richard, W. Tsai, W. Vandervorst, E. Young, C. Zhao, S. De Gendt, A. Heyns, J. W. H. Maes, M. Tuominen, N. Rochat, M. Olivier, and A. Chabli, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001, IEEE Cat. No. 01EX537, p. 226.
7. B. W. Busch, O. Pluchery, Y. J. Chabal, D. A. Muller, R. L. Opila, J. R. Kwo, and E. Garfunkel, MRS Bull. 27, 206 (2002).
8. L. G. Gosset, J. F. Damlencourt, O. Renault, D. Rouchon, P. Holliger, A. Ermolieff, I. Trimaille, J. J. Ganem, F. Martin, and M. N. Semeria, J. Non-Cryst. Solids 303, 17 (2002).
9. M. L. Green, M.-Y. Ho, B. Busch, G. D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, P. I. Räisänen, D. Muller, M. Bude, and J. Grazul, J. Appl. Phys. 92, 7168 (2002).
10. M. M. Frank, Y. J. Chabal, and G. D. Wilk, Appl. Phys. Lett. 82, 4758 (2003).
11. M. M. Frank, Y. J. Chabal, and G. D. Wilk, Mater. Res. Soc. Symp. Proc. 745, N2.4.1 (2003).
12. I. J. R. Baumvol, Surf. Sci. Rep. 36, 1 (1999).
13. 27A1, NRP was used instead of nuclear reaction analysis.
14. Y. J. Chabal, G. S. Higashi, K. Raghavachari, and V. A. Burrows, J. Vac. Sci. Technol. A 7, 2104 (1989).
15. T. Hattori, T. Aiba, E. Iijima, Y. Okube, H. Nohira, N. Tate, and M. Katayama, Appl. Surf. Sci. 104/105, 323 (1996).
16. Small signals in the C-H stretch region are consistent with instrumental instabilities arising from hydrocarbons in the optical path.
17. K. T. Queeney, M. K. Weldon, J. P. Chang, Y. J. Chabal, A. B. Gurevich, J. Sapjeta, and R. L. Opila, J. Appl. Phys. 87, 1322 (2000).
18. W. Mozgawa, M. Sitarz, and M. Rokita, J. Mol. Struct. 512, 251 (1999).
19. F. De Smedt, C. Vinckier, I. Cornelissen, S. De Gendt, and M. Heyns, J. Electrochem. Soc. 147, 1124 (2000).
20. W. J. Royea, A. Juang, and N. S. Lewis, Appl. Phys. Lett. 77, 1988 (2000).
21. R. L. Puurunen, M. Lindblad, A. Root, and A. O. I. Krause, Phys. Chem. Chem. Phys. 3, 1093 (2001).