Ge/GeO2 interface control with high-pressure oxidation for improving electrical characteristics

Applied Physics Express

Volumn 2, Issue 7, 2009, Pages

  Lee, Choong Hyun ^a   Tabata, Toshiyuki ^a,b   Nishimura, Tomonori ^a,b   Nagashio, Kosuke ^a,b   Kita, Koji ^a,b   Toriumi, Akira ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; INTERFACE CONTROL; INTERFACE STATES DENSITY; POST DEPOSITION ANNEALING; PRESSURE OXIDATION; THERMALLY OXIDIZED;

CAPACITANCE; DESORPTION; ELECTRIC POTENTIAL; ORGANIC POLYMERS; OXIDATION; REFRACTIVE INDEX;

GERMANIUM;

EID: 68249110411     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.071404     Document Type: Article

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