Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 8986-8991

  Fissel, A ^a   Dabrowski, J ^a   Osten, H J ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AB INITIO PSEUDOPOTENTIAL CALCULATIONS; FILM FORMATIONS; FORMATION PROCESS; GROWTH MECHANISMS; HIGH-K DIELECTRIC; INTERFACE DIPOLE; INTERFACE PROPERTY; INTERFACE REGIONS; INTERFACE STRUCTURES; OXIDE LAYER THICKNESS; POSTGROWTH ANNEALING; PRASEODYMIUM OXIDES; SI(0 0 1); THEORETICAL STUDY; VALENCE-BAND MAXIMUMS;

BINDING ENERGY; CALCULATIONS; CORE LEVELS; EPITAXIAL GROWTH; PHOTOELECTRONS; PRASEODYMIUM; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 0036606978     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471943     Document Type: Article

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