Fermi level pinning and Hf-Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Xiong, K ^a   Peacock, P W ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; GATES (TRANSISTOR); INTERFACES (MATERIALS); POLYSILICON; SUBSTITUTION REACTIONS;

CONDUCTION BAND (CB); GATE ELECTRODES; METAL INDUCED GAP STATES (MIGS);

HAFNIUM COMPOUNDS;

EID: 19744383491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844611     Document Type: Article

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