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Applied Physics Letters

Volumn 101, Issue 5, 2012, Pages

Identifying a suitable passivation route for Ge interfaces

(3) Li, H a Lin, L a Robertson, J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TAIL; DEFECT CREATION; FLATBAND SHIFT; GE SUBSTRATES; LARGE BAND; VACANCY DIFFUSION; VALENCE BAND OFFSETS;

GATE DIELECTRICS; GERMANIUM OXIDES; HAFNIUM OXIDES; PASSIVATION; VACANCIES;

GERMANIUM;

EID: 84864691281 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4742166 Document Type: Article

Times cited : (22)

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