Stability and band offsets of nitrogenated high-dielectric-constant gate oxides

Applied Physics Letters

Volumn 84, Issue 1, 2004, Pages 106-108

  Shang, G ^a   Peacock, P W ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; ELECTRIC RESISTANCE; HAFNIUM COMPOUNDS; HIGH TEMPERATURE OPERATIONS; LANTHANUM COMPOUNDS; NITROGEN; PERMITTIVITY; SILICA; SILICATES;

HOLE INJECTION BARRIERS;

GATES (TRANSISTOR);

EID: 0942299982     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1638896     Document Type: Article

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