High-quality HfSixOy gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal-Hf and SiO2 underlayer

Applied Physics Letters

Volumn 85, Issue 3, 2004, Pages 449-

  Watanabe, Heiji ^a,b   Saitoh, Motofumi ^a   Ikarashi, Nobuyuki ^a   Tatsumi, Toru ^a  

^a NEC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTALLIZATION; FABRICATION; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SILICA; SUBSTRATES;

COULOMB SCATTERING; ELECTRICAL STRESSING; GATE DIELECTRICS; HIGH K DIELECTRICS;

HAFNIUM COMPOUNDS;

EID: 4043156243     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767593     Document Type: Article

References (9)

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