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Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

Oxygen passivation of vacancy defects in metal-nitride gated HfO 2/SiO2/Si devices

(3) Cartier, E a Hopstaken, M a Copel, M a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CAPACITANCE VOLTAGE CHARACTERISTIC; FLAT-BAND VOLTAGE; INSULATING LAYERS; ISOTOPICALLY LABELED; MASS SPECTROSCOPY; MILD OXIDATION; OVEROXIDATIONS; OXYGEN PASSIVATION; SECONDARY IONIZATION; SI DEVICES; THERMAL PROCESSINGS; THIN TIN; VACANCY DEFECTS;

ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; LABELS; MASS SPECTROMETRY; NITRIDES; OXIDATION; OXYGEN; PASSIVATION; SILICON; SILICON COMPOUNDS; TITANIUM COMPOUNDS; TITANIUM NITRIDE; VACANCIES;

OXYGEN VACANCIES;

EID: 68249096705 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3186075 Document Type: Article

Times cited : (62)

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