Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 209-211

  Lo, S H ^a,b   Buchanan, D A ^a,b   Taur, Y ^a,b   Wang, W ^a,b  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; ULTRATHIN FILMS;

ELECTRON TUNNELING CURRENT; INVERSION LAYER;

MOSFET DEVICES;

EID: 0031140867     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568766     Document Type: Article

References (11)

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