Origins of effective work function roll-off behavior for high-κ last replacement metal gate stacks

IEEE Electron Device Letters

Volumn 34, Issue 6, 2013, Pages 729-731

  Ando, Takashi ^a   Cartier, Eduard A ^a   Bruley, John ^a   Choi, Kisik ^b   Narayanan, Vijay ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Effective work function; gate last; high ; replacement metal gate; scavenging

Indexed keywords

EFFECTIVE WORK FUNCTION; EQUIVALENT OXIDE THICKNESS; GATE-LAST; HIGH-WORK-FUNCTION METAL; INTERFACIAL LAYER; LOW TEMPERATURES; METAL GATE; METAL GATE STACK;

ELECTRON DEVICES; ELECTRONICS ENGINEERING; SCAVENGING;

METALS;

EID: 84878288232     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2259136     Document Type: Article

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