Measurement of the band offsets between amorphous LaAlO 3 and silicon

Applied Physics Letters

Volumn 84, Issue 5, 2004, Pages 726-728

  Edge, L F ^a   Schlom, D G ^a   Chambers, S A ^b   Cicerrella, E ^c   Freeouf, J L ^c,e   Hollander B ^d   Schubert, J ^d  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

^e Interface Studies Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; SILICON SUBSTRATES;

AMORPHOUS FILMS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); MOLECULAR BEAMS; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; THERMOCOUPLES; X RAY PHOTOELECTRON SPECTROSCOPY;

LANTHANUM COMPOUNDS;

EID: 1242308912     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644055     Document Type: Article

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