Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

Microelectronic Engineering

Volumn 65, Issue 4, 2003, Pages 447-453

  Torii, Kazuyoshi ^a   Shimamoto, Yasuhiro ^a   Saito, Shin Ichi ^a   Obata, Katsunori ^a   Yamauchi, Tsuyoshi ^a   Hisamoto, Digh ^a   Onai, Takahiro ^a   Hiratani, Masahiko ^a  

^a HITACHI LTD   (Japan)

Author keywords

Al2O3; Electron mobility; High k gate dielectric

Indexed keywords

ALUMINA; ANNEALING; ELECTRON MOBILITY; INTERFACES (MATERIALS); OXIDATION; OXYGEN; SCATTERING; THERMODYNAMIC STABILITY;

GATE DIELECTRICS;

FIELD EFFECT TRANSISTORS;

EID: 0037961576     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00163-1     Document Type: Article

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