Charge detrapping in HfO 2 high-κ gate dielectric stacks

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5223-5225

  Gusev, E P ^a   D'Emic, C P ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); DIELECTRIC STACKS; ELECTRON INJECTION;

CAPACITORS; CMOS INTEGRATED CIRCUITS; COMPLEXATION; DIELECTRIC FILMS; FERMI LEVEL; FIELD EFFECT TRANSISTORS; FILM GROWTH; HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; QUANTUM THEORY; TEMPERATURE MEASUREMENT; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

ELECTRON TRAPS;

EID: 0942299243     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633332     Document Type: Article

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