Oxygen diffusion in atomic layer deposited ZrO2 and HfO 2 thin films on Si (100)

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 144-149

  Ferrari, S ^a   Scarel, G ^a  

^a LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DIFFUSION; MOSFET DEVICES; OXIDATION; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SILICA; THERMODYNAMIC STABILITY; THICKNESS CONTROL; TRANSMISSION ELECTRON MICROSCOPY; WATER; ZIRCONIA;

ATOMIC LAYER DEPOSITION (ALD); MEDIUM ENERGY ION SCATTERING (MEIS); OXYGEN DIFFUSION; ZRO2;

THIN FILMS;

EID: 3142749109     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1753080     Document Type: Article

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