Direct tunneling leakage current and scalability of alternative gate dielectrics

Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 2091-2093

  Yeo, Yee Chia ^a   King, Tsu Jae ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE GATE DIELECTRICS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DIRECT TUNNELING; DIRECT-TUNNELING GATE CURRENT; EFFECTIVE MASS; GATE LEAKAGES; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; LOW POWER TECHNOLOGIES; MATERIAL PARAMETER; OFF-STATE LEAKAGE CURRENT; SCALING LIMITS;

DIELECTRIC MATERIALS; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE;

GATE DIELECTRICS;

EID: 79956033267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506941     Document Type: Article

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