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Physical Review Letters

Volumn 99, Issue 8, 2007, Pages

Control of schottky barrier heights on high-K gate dielectrics for future complementary metal-oxide semiconductor devices

(2) Tse, Koon Yiu a Robertson, John a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; GATE DIELECTRICS; INTERFACES (MATERIALS); MOS DEVICES; PERMITTIVITY; WORK FUNCTION;

FERMI LEVEL PINNING; GATE OXIDE; OXIDE TERMINATION;

SCHOTTKY BARRIER DIODES;

METAL; OXIDE;

SEMICONDUCTOR;

METALS; OXIDES; SEMICONDUCTORS;

EID: 34548273066 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.99.086805 Document Type: Article

Times cited : (55)

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