Dielectric constant enhancement due to Si incorporation into HfO 2

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Tomida, Kazuyuki ^a   Kita, Koji ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLAUSIUS-MOSSOTTI RELATIONS; HFO 2; MOLAR VOLUMES; TETRAGONAL PHASES;

ANNEALING; DOPING (ADDITIVES); HYDROGEN INORGANIC COMPOUNDS; PERMITTIVITY; PHASE TRANSITIONS; POLARIZATION;

SILICON;

EID: 33749476389     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2355471     Document Type: Article

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