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Volumn 27, Issue 3, 2002, Pages 198-204
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A thermodynamic approach to selecting alternative gate dielectrics
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Author keywords
Bandgap; High dielectric constant materials; High dielectrics; Thermal stability; Thermodynamics
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Indexed keywords
ENERGY GAP;
GATES (TRANSISTOR);
MOSFET DEVICES;
NITRIDES;
OXIDES;
PERMITTIVITY;
SILICON;
TEMPERATURE;
THERMODYNAMIC STABILITY;
THERMODYNAMICS;
ALTERNATIVE GATE DIELECTRICS;
BANDGAP;
BINARY OXIDES;
HIGH DIELECTRIC CONSTANT MATERIALS;
DIELECTRIC MATERIALS;
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EID: 0036502104
PISSN: 08837694
EISSN: None
Source Type: Journal
DOI: 10.1557/mrs2002.71 Document Type: Article |
Times cited : (310)
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References (62)
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