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Volumn 27, Issue 3, 2002, Pages 198-204

A thermodynamic approach to selecting alternative gate dielectrics

Author keywords

Bandgap; High dielectric constant materials; High dielectrics; Thermal stability; Thermodynamics

Indexed keywords

ENERGY GAP; GATES (TRANSISTOR); MOSFET DEVICES; NITRIDES; OXIDES; PERMITTIVITY; SILICON; TEMPERATURE; THERMODYNAMIC STABILITY; THERMODYNAMICS;

EID: 0036502104     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2002.71     Document Type: Article
Times cited : (310)

References (62)
  • 25
    • 4244203604 scopus 로고
    • Formation and transformation of titanium disilicide thin films on silicon substrates
    • PhD dissertation, Stanford University
    • (1989) , pp. 38
    • Beyers, R.1
  • 40
    • 0008775640 scopus 로고    scopus 로고
    • CD-ROM database (International Center for Diffraction Data, Newton Square, PA)
    • (1997) NIST Crystal Data 1997


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.