SCOPUS 정보 검색 플랫폼

Volumn 27, Issue 7, 2012, Pages

Germanium surface passivation and atomic layer deposition of high-k dielectrics - A tutorial review on Ge-based MOS capacitors

(10) Xie, Qi a Deng, Shaoren a Schaekers, Marc b Lin, Dennis b Caymax, Matty b Delabie, Annelies b Qu, Xin Ping c Jiang, Yu Long c Deduytsche, Davy a Detavernier, Christophe a

a GHENT UNIVERSITY (Belgium)

b IMEC (Belgium)

c FUDAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHANNEL MATERIALS; DEPOSITION METHODS; DEVICE PERFORMANCE; DRIVE CURRENTS; EQUIVALENT OXIDE THICKNESS; GATE STACKS; GE SURFACES; GERMANIUM SURFACE; HIGH QUALITY; HIGH-K DIELECTRIC; INTERFACIAL LAYER; INTERFACIAL PROPERTY; MATERIALS AND PROCESS; METAL GATE MATERIALS; MOS STRUCTURE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POST DEPOSITION ANNEALING; PROCESS STEPS; SHORT CHANNELS; SURFACE OXIDATIONS; SURFACE PASSIVATION;

ANNEALING; ATOMIC LAYER DEPOSITION; DEGRADATION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; LEAD OXIDE; PASSIVATION; SILICON;

GERMANIUM;

EID: 84862751339 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/27/7/074012 Document Type: Review

Times cited : (163)

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