Hydrogen interaction kinetics of Ge dangling bonds at the Si 0.25Ge0.75/SiO2 interface

Journal of Applied Physics

Volumn 116, Issue 4, 2014, Pages

  Stesmans, A ^a   Nguyen Hoang, T ^a   Afanas'Ev, V V ^a  

^a KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DANGLING BONDS; DEFECTS; DISSOCIATION; HYDROGEN; KINETICS; PASSIVATION; SILICON;

CAPACITANCE VOLTAGE MEASUREMENTS; DEFECT PASSIVATION; DISSOCIATION ENERGIES; HYDROGEN INTERACTION; INTERACTION KINETICS; MOLECULAR HYDROGEN; PASSIVATION PROCESS; TREATMENT TEMPERATURE;

GERMANIUM;

EID: 84905860867     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4880739     Document Type: Article

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