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Volumn 49, Issue 1-3, 2003, Pages 1-114

Reaction-diffusion in high-k dielectrics on Si

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DEPOSITION; ELECTRON TUNNELING; LEAKAGE CURRENTS; MICROELECTRONICS; PERMITTIVITY; SILICON; SINGLE CRYSTALS; SUBSTRATES; ULTRATHIN FILMS;

EID: 0037322229     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-5729(02)00113-9     Document Type: Review
Times cited : (125)

References (153)
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    • (1996) IEEE Trans. Electron Dev. , vol.43 , pp. 1233
    • Momose, H.S.1    Ono, M.2    Yoshitomi, T.3    Ohguro, T.4    Nakamura, S.-I.5    Saito, M.6    Iwai, H.7
  • 12
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    • (2002) Materials Research Society Workshop Series , pp. 1
    • Iwai, H.1    Ohmi, S.2
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    • G. Barbottin, A. Vapaille (Eds.), Elsevier, Amsterdam
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    • Rigo, S.1
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    • 2 as Gate Dielectrics for Future Si-based Microelectronics, Materials Research Society, Warrendale
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    • (2002) Materials Research Society Workshop Series , pp. 8
    • Miyazaki, S.1
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    • H.R. Huff, et al. (Eds.), Materials Research Society, Warrendale
    • 2 and High-K Materials for ULSI, vol. 567, Materials Research Society, Warrendale, 1999, pp. 323-341.
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    • Gilmer, M.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.